Antenna/CMOS Integrated Circuit for IEEE 802.11a Wireless LAN

碩士 === 南台科技大學 === 電子工程系 === 92 === This study proposes the development of the 5.25 GHz antenna and CMOS RFIC in a 0.18 μm CMOS technology for IEEE 802.11a wireless LAN. The CMOS front-end includes a transmitter/receiver switch (T/R switch), a low-noise amplifier (LNA) and a mixer. The antenna provid...

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Bibliographic Details
Main Authors: Pai-Fu Hung, 洪百甫
Other Authors: Yu-Shyan Lin
Format: Others
Language:zh-TW
Published: 2004
Online Access:http://ndltd.ncl.edu.tw/handle/15044507091802342177
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Summary:碩士 === 南台科技大學 === 電子工程系 === 92 === This study proposes the development of the 5.25 GHz antenna and CMOS RFIC in a 0.18 μm CMOS technology for IEEE 802.11a wireless LAN. The CMOS front-end includes a transmitter/receiver switch (T/R switch), a low-noise amplifier (LNA) and a mixer. The antenna provides the advandages of the low return loss and great pattern. The T/R switch provides several advantages, such as the low insertion loss, high isolation, low voltage, lower noise and high gain. For the mixer, it exhibits the high linearity and isolation so as to boost the performance of the whole RF front-end. The antenna exhibits a input return loss (S11) less than —10 dB, a bandwidth larger than 200 MHz, and a great omnidirectional pattern. This chip uses a standard 0.18 μm CMOS technology. The T/R switch exhibits a S11 less than —16.7 dB on transmitter or receiver port, the antenna exhibits a S11 less than —15.3 dB, an insertion loss less than 2.6 dB, an isolation of 20.6 dB, an input P1dB of 16 dBm. The LNA exhibits a S11 less than —16.1 dB, a S22 less than —25 dB, a gain larger than 24.5 dB, a noise figure less than 2.93 dB, an input P1dB of —19 dBm, and an IIP3 of —12.15 dBm. The mixer exhibits a S22 less than —32.7 dB, a conversion gain of —5.7 dB, a P1dB of —10 dBm, an IIP3 of —0.6 dBm, an isolation at LO to IF of —86.8 dB, and an isolation at RF to IF of —123.5 dB. The whole RF front end exhibits a input return loss less than —16.1 dB, a conversion gain of 17.2 dB, a noise figure of 4.85 dB, an IIP3 of —35.27 dBm. It will be integrated with the following stages in the future to meet the system-on-chip (SOC) goal.