| Summary: | 碩士 === 南台科技大學 === 電子工程系 === 92 === This thesis presents a series of design and fabrication of microwave power amplifiers (PA’s). Chapter 2 describes the basic microwave theory. Chapter 3 introduces the design theory of the power amplifiers. Chapter 4 proposes a 2.4 GHz microwave PA. The output power (Pout) of the three-stage 2.4 GHz PA reach 28 dBm. The output 1 dB compression point (P1dB) is 26 dBm. S21 is as high as 26 dB. S11 and S22 are less than -10 dB.
In Chapter 5, we designed a 35 GHz Ka-band PA. The monolithic microwave integrated circuits (MMIC) PA adopt the GaAs material system due to it’s advantages of high bandgap. Additionally, the GaAs-based transistors has the advantages of high current density, high breakdown voltage, excellent high frequency property, and low substrate loss under high frequency operation. Moreover, this 35 GHz PA is designed by microstip line and fabricated by Win foundry. We expect that Pout, S21, power-added efficiency (PAE) can reach 24.5 dBm, 18.6 dB, and 22.5 %, respectively. The chip area is 3 mm× 1 mm.
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