| Summary: | 碩士 === 南台科技大學 === 化學工程系 === 92 === The application of conductive polyaniline (PANI) on the related electronic industry has become more and more interesting and popular. In this research,can separate from three section:
(1)The chemical oxidization method was used to prepare
emeraldine salt (ES) type PANI doped with dodecyl benzene
sulfonic acid (DBSA). Influences of synthetic conditions on
the yield and conductivity of the ES type PANDB were
studied. These synthetic conditions included the mole ratio
of DBSA/AN, and synthetic temperature. In order to obtain
higher conductivity, the optimal mole ratio of DBSA/AN is
0.8/1 at the synthetic temperature of 0~5℃. Although the
conductivities of synthetic products is lower than that at
synthetic temperature of 0℃,the yield is slightly higher
at higher synthetic temperature.
(2)The chemical oxidization method was used to form emeraldine
salt (ES) type PANI co-doped with HNO3 and dodecyl benzene
sulfonic acid (DBSA). Influences of synthetic conditions on
the yield and conductivity of the ES type PANI were
studied. These synthetic conditions included the mole ratio
of HNO3/DBSA, and synthetic temperature. In order to obtain
higher conductivity, the optimal mole ratio of HNO3/DBSA is
0.3/7 at the synthetic temperature of 0~5℃. Although the
yield is slightly higher at higher synthetic temperature,
the conductivities of synthetic products is lower than that
at synthetic temperature of 0℃.
(3)The chemical oxidization method was used to prepare
emeraldine salt (ES) type PANI doped with dodecyl benzene
sulfonic acid (DBSA). Moreover, in this study, we dissolved
PANDB and ABS soluble in chloroform and prepared ABS/PANDB
blend films with various blend ratios by solution blend
method. Thermogravimetric analysis (TGA) was used for the
thermal degradation analyses of ABS/PANDB blend films with
various blend ratios. The surface electronic resistance (RT
－1000) was also determined. Also, the dispersions of
PANDB in the blend film were examined by optical
microscope. By using the TGA analysis, the thermal
degradation onset temperature ( TOnset 2 ) of the ABS/PANDB
blend films is increased with the weight percent of the
PANDB is increased. By using the surface electronic
resistance (RT－1000), it is found that the surface
electronic resistance of the ABS/PANDB blend films is
increased with the weight percent of the PANDB is decreased.
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