| Summary: | 碩士 === 國立臺灣科技大學 === 電子工程系 === 92 === We have successfully used SiH4 as main raw material to deposit semitransparent film that the main composition of the film is silicon oxynitride. And, it has light absorption (absorption coefficient from 0 to 20000 cm-1) that can be applied as heat retaining layer to enhance crystallization of poly-Si during excimer laser annealing.
By adjusting the flow rate of N2, we can control the absorption coefficient of the semitransparent film at will.
In the analysis of FTIR、AES, and XPS, we know the reason of increasing absorption coefficient is silicon-rich in the film. SiONx makes the absorption point of the film shift to the long wavelength side. After get the optimum condition of the semitransparent and using this film as heat retaining layer, we use excimer laser and have successfully induced lateral growth of the 50nm thick silicon. Its length reaches to 7 um and exceeds more than five times.
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