| Summary: | 碩士 === 國立臺灣科技大學 === 材料科技研究所 === 92 === The content of this thesis is to fabricate aluminum nitride thin films with c-axis preferred orientation by the reaction sputtering. Relation between the crystal orientation and the working pressure,target to substrate distance, and the temperature
of target was studied. AlN thin films with c-axis preferred orientation can be obtained at substrate temperature of 300OC and room temperature. Both thin films were used as the piezoelectric layer in the surface acoustic wave devices, and their frequency of response were compared. It is confirmed that the aluminum nitride thin film with c-axis preferred orientation can be formed locally at room temperature by using the lift-off technique . Therefore, the fabrication process of the aluminum nitride thin film bulk acoustic resonator can be improved by utilizing this newly developed low
temperature deposition process.
The optimized growth condition for the c-axis preferred orientation aluminum nitride thin film at room temperature is with a pressure between
3×10-3 torr and 4×10-3 torr, an argon flow of 3 sccm, a nitrogen folw of 9 sccm, a
target to substrate distance of 7 cm, and a radio frequency power of 250W.
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