Dynamic Analysis of 1.3μm GaAs-based Semiconductor Lasers
碩士 === 國立臺灣大學 === 電子工程學研究所 === 92 === In this paper, 1.3μm GaAs-based semiconductor lasers including of both InGaAsN quantum well lasers and InAs/InGaAs quantum dot lasers have been measrred. At room temperature, light-current, spectral and dynamic characteristics of lasers have been investigated....
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Format: | Others |
Language: | zh-TW |
Published: |
2004
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Online Access: | http://ndltd.ncl.edu.tw/handle/96650765218219294614 |