Dynamic Analysis of 1.3μm GaAs-based Semiconductor Lasers

碩士 === 國立臺灣大學 === 電子工程學研究所 === 92 === In this paper, 1.3μm GaAs-based semiconductor lasers including of both InGaAsN quantum well lasers and InAs/InGaAs quantum dot lasers have been measrred. At room temperature, light-current, spectral and dynamic characteristics of lasers have been investigated....

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Bibliographic Details
Main Authors: Jia-Xing Luan, 欒嘉興
Other Authors: 毛明華
Format: Others
Language:zh-TW
Published: 2004
Online Access:http://ndltd.ncl.edu.tw/handle/96650765218219294614