THERMAL-DRIVEN INTERCONNECT OPTIMIZATIONBY SIMULTANEOUS GATE AND WIRE SIZING
碩士 === 國立臺灣大學 === 電子工程學研究所 === 92 === The dramatic increase of power consumption and integration density has led to high operating temperature. Temperature, as well as electromigration (EM), area, timing, and power, has become one of the most important concerns in the design of nanometer integrated...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | en_US |
Published: |
2004
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Online Access: | http://ndltd.ncl.edu.tw/handle/8vnu2k |