| Summary: | 碩士 === 國立臺灣大學 === 電子工程學研究所 === 92 === Solar cell was used between thin film transistor (TFT) and organic light emitting diode (OLED) to absorb both the sun light and the emitted light of OLED to solved the contrast problem in the TFT-driven OLED and to achieve the energy-recoverable OLED. The poly-Si TFT and a-Si:H p-i-n solar cell for energy-recoverable OLED were studied in this thesis, in respectively. The poly-Si TFT with a SiON absorption layer fabricated by excimer laser annealing was successfully achieved, its performance is as follows : five order in ON/OFF current ratio, 3.7 V in threshold voltage, and 20.3 in field effect mobility. The a-Si:H p-i-n solar cell was fabricated successfully, the best one has power conversion efficiency of 4.24 % under white light illumination and a maximal quantum efficiency of about 0.5 at about 570 nm. Although the performance of solar cell was affected after depositing the OLED. But, by using the a-Si:H p-i-n solar cell below the OLED, the reflectance can be reduced and the contrast problem in the TFT-driven OLED can be solved.
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