Research of Novel Metal-Oxide-Semiconductor Device
碩士 === 國立臺灣大學 === 電子工程學研究所 === 92 === Abstract The thesis is divided into two parts, simulation and experiment, which is related to FinFET and electronics of high-k material respectively. Due to the scaling down of the device size, the SiO2 scaling is currently the biggest challenge, which needs to...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/54086453282786334857 |