Research of Novel Metal-Oxide-Semiconductor Device

• Main Authors: Shi -Hao Huang, 黃仕澔
• Other Authors: C. W. Liu
• Format: Others
• Language: en_US
• Published: 2004
• Online Access: http://ndltd.ncl.edu.tw/handle/54086453282786334857

碩士 === 國立臺灣大學 === 電子工程學研究所 === 92 === Abstract The thesis is divided into two parts, simulation and experiment, which is related to FinFET and electronics of high-k material respectively. Due to the scaling down of the device size, the SiO2 scaling is currently the biggest challenge, which needs to satisfy only a few mono-layers SiO2. FinFET is the one solution to the scaling problem that improves the control of gate. It is very important to model the physics of FinFET with the simulation before achievement of process. The difference between FinFET and Strained FinFET, and the electric characteristics of NMOS and PMOS devices are introduced. Using high-k material as gate insulator is another method to overcome the scaling challenge. The HfO2 is a very promising candidate in several high-k materials due to high thermal stability, wide band gap, acceptable band offset from silicon, and high dielectric constant, as compared to SiO2. The optical and electrical properties of high-k reliability without annealing and that after H2 and D2 annealing are demonstrated the difference between. The optical characteristic of high-k is without a sharp breakdown with D2 annealing. The HfO2 thin films using oxidation of Hf and HfN are prepared on MIS structure, and the electrical characteristics of oxidation HfO2 under different temperatures are discussed. Finally, we made a summary and a future work.