Investigation of ZnSe Heteroepitaxy Metal-Semiconductor-Metal Photodetectors with ITO Electrode Integrated with NMOS Transistor

• Main Authors: Sin-Bin Huang, 黃信斌
• Other Authors: Chung-Cheng Chang
• Format: Others
• Language: en_US
• Published: 2004
• Online Access: http://ndltd.ncl.edu.tw/handle/47167248317308740865

碩士 === 國立臺灣海洋大學 === 電機工程學系 === 92 === In this thesis, the low cost IR furnace chemical vapor deposition system is used to obtain the ZnSe epilayers. The quality of ZnSe epilayers is analyzed by the XRD, SEM and photoluminescence (PL) measurement. The ZnSe epilayers was used to be the MSM photodetectors and their electrode was used ITO and Au materials. In additions, a new annealing technology was found to enhance the transparency and conductivity of ITO layers. The MSM photodetectors has better photocurrent and the photoresponsivity also since the electrode improvement. In addition, MSM photodetectors and N-MOSFET are integrated to research the OEIC technology. The integrated technology is successful, In the future, in this experiment that this technique can be used to the OEIC fabrication.