A Measurement Unit for Input Signal Analysis of SRAM’s Sense Amplifier
碩士 === 國立清華大學 === 電機工程學系 === 92 === A Static Random Access Memory (SRAM) measurement unit is presented to sample the voltage signals of bit line pairs and to amplify the weak signal to higher voltage differential level. According to the measured result, the reliability analysis can be easily comple...
Main Authors: | Yi-Ming Sheng, 盛以明 |
---|---|
Other Authors: | Tsin-Yuan Chang |
Format: | Others |
Language: | zh-TW |
Published: |
2004
|
Online Access: | http://ndltd.ncl.edu.tw/handle/27964862236796017556 |
Similar Items
-
Built-In Self-Measurement for SRAM Sense Amplifier Input Signal
by: Chan-Chuan Li, et al.
Published: (2005) -
The analysis and design of SRAM sense amplifier circuits
by: 張書賢
Published: (2003) -
A Current-Mode Sense Amplifier for Low Power SRAM
by: 丁子仁
Published: (2002) -
Design and Analysis of A Charge Transfer Current Latched Sense Amplifier Circuit for SRAM
by: Yu-shu Tsai, et al.
Published: (2006) -
Design and analysis of sense amplifier circuits used in high-performance and low-power SRAMs
by: Palatham-Veedu, Sajith Ahamed
Published: (2011)