The electrical properties of metal-ferroelectric-insulator-silicon(MFIS) structures for non-volatile memory applications

The electrical properties of metal-ferroelectric-insulator-silicon(MFIS) structures for non-volatile memory applications

碩士 === 國立清華大學 === 電子工程研究所 === 92 === The electrical characteristics of metal-ferroelectric-insulator-silicon (MFIS) structures are studied. The ferroelectric layer is lead-zirconate-titanate (PZT). High dielectric constant films of La2O3 , HfO2 and Dy2O3 are used as the insulator layer . This struct...

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Bibliographic Details
Main Authors:	Yu-Ping Hu, 胡喻評
Other Authors:	Ya-Min Lee
Format:	Others
Language:	zh-TW
Published:	2004
Online Access:	http://ndltd.ncl.edu.tw/handle/43805964398244804419

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