The electrical properties of metal-ferroelectric-insulator-silicon(MFIS) structures for non-volatile memory applications
碩士 === 國立清華大學 === 電子工程研究所 === 92 === The electrical characteristics of metal-ferroelectric-insulator-silicon (MFIS) structures are studied. The ferroelectric layer is lead-zirconate-titanate (PZT). High dielectric constant films of La2O3 , HfO2 and Dy2O3 are used as the insulator layer . This struct...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/43805964398244804419 |