Analysis and Design of Nanoscale Strained Silicon
碩士 === 國立清華大學 === 動力機械工程學系 === 92 === Mobility and current drive improvements associated with the tensile strained-silicon in NMOS. The tensile strained-silicon is based on the Si/Si1-xGex or “highly-tensile” silicon nitride capping layer. This research provides a numerical simulation of finite elem...
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| Format: | Others |
| Language: | zh-TW |
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2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/34409335596692917022 |