A Study of Cu Oxidation Kinetics at Low Temperatures
碩士 === 國立清華大學 === 材料科學工程學系 === 92 === With the evolution of VLSI process technology, the continuous shrinkage device feature size leads to an increase in the density of integrated circuits (ICs). The effect of RC delay in ICs will become significant and limit the advance of process technology. Tradi...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/03299717641233583997 |