Device Design and Modeling of Short-Channel Effect for Nanoscale MOSFET

博士 === 國立清華大學 === 電機工程學系 === 92 === The objective of this dissertation is to explore in depth the feasibility of continued scaling for the nanoscale MOSFET devices through precise modeling of short-channel effect and proper design of channel profile and device structure. The analytical short-channel...

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Bibliographic Details
Main Authors: Chun-Hsing Shih, 施君興
Other Authors: Chenhsin Lien
Format: Others
Language:en_US
Published: 2003
Online Access:http://ndltd.ncl.edu.tw/handle/55516698564296198206