Template-assisted Heteroepitaxy of Group-Ⅲ Nitride Epilayers and Nanocrystals on Silicon

• Main Authors: Chung-Lin Wu, 吳忠霖
• Other Authors: Shangjr Gwo
• Format: Others
• Language: en_US
• Published: 2003
• Online Access: http://ndltd.ncl.edu.tw/handle/69864314169379341450

博士 === 國立清華大學 === 物理學系 === 92 === Heteroepitaxy provides various possibilities of creating materials with tailor-made properties for specific applications. With the assistance of a template, high-quality heteroepitaxial films and nanacrystals can be grown on a suitable substrate. In the epitaxial film growth, the template layer can be used as a buffer to reduce the influences, resulting from the lattice mismatch between the epitaxial film and the substrate. Moreover, in the nanocrystal growth case, the template can provide a supporting surface to form 3-dimentional structures on the nano scale. In this dissertation, I present the results of growing high quality GaN and related nitride compound films grown on the silicon substrate by using the coincidently matched double buffer layer system, which is composed of a β-Si3N4(0001) layer and a AlN(0001) layer. In addition, the inhibition of Ga/Si and Al/Si interduffusion at high growth temperature can be achieved by the β-Si3N4 template. Furthermore, the inert single-crystal β-Si3N4(0001)/Si(111) surface is used to nucleate Ga droplets for growing coherent and faceted GaN nanocrystals by nitrogen-plasma-assisted reactive epitaxy.