Study of Carrier Cooling in Zn0.91Cd0.09Se/ZnSe Multiple Quantum Wells
碩士 === 國立中山大學 === 物理學系研究所 === 92 === The hot carrier dynamics of Zn0.91Cd0.09Se/ZnSe multi-quantum wells were studied using the femtosecond time-resolved photoluminescence upconversion technique. The carrier cooling behavior was investigated for different compositions at various lattice temperature...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/04992749350596624257 |
| Summary: | 碩士 === 國立中山大學 === 物理學系研究所 === 92 === The hot carrier dynamics of Zn0.91Cd0.09Se/ZnSe multi-quantum wells were studied using the femtosecond time-resolved photoluminescence upconversion technique. The carrier cooling behavior was investigated for different compositions at various lattice temperatures. The hot carriers generated photoexcitation by 405nm Ti:sapphire laser pulses release their excess energy primarily through carrier-LO-phonon interaction. As the excess energy reduce to the amount that lower than the energy of LO phonon, the excess energy was released by carrier-TA-phonon scattering before radiative recombination occurs. We have determined the scattering times of carrier-LO-phonon scattering at different lattice temperatures. No hot phonon effects was found at low photoexcited carrier density. The dependence of photoluminescence lifetime on wavelength was also discussed.
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