Deposition of NiO/CGO films by EAVD method

• Main Authors: Jun-liang Chang, 張鈞量
• Other Authors: none
• Format: Others
• Language: zh-TW
• Published: 2004
• Online Access: http://ndltd.ncl.edu.tw/handle/99195342992549029665

碩士 === 國立中山大學 === 材料科學研究所 === 92 === Abstract In this study, EAVD(Electrostatic Assisted Vapor Deposition) technique was used to fabricate NiO/CGO (Cerium Gadolinum Oxide) films for the anode of IT-SOFCs (Intermediate Temperature-Solid Oxide Fuel Cells). The objective of this work is to establish the relationship between the morphology of NiO/CGO films and deposition parameters. The effects of different deposition parameters on film morphology were studied. The systematically changed deposition parameters were : deposition temperature, deposition time, flow rate and concentration of precursor solution and substrate types. According to experiment results, deposition temperature and deposition time are most important deposition parameters of controlling the morphology of films. The deposited NiO/CGO films with a highly porous structure were obtained above 400 oC and 5mins. On the other hand, when deposition temperature and time were decreased below 400 oC and 5mns, dense films were obtained. In this study, the flow rate and concentration of precursor solution and substrate types also influence the morphology of films, although to a lesser degree. The most suitable range of the flow rate is 0.7 cc/hr to 1.4 cc/hr. The XRD results show that the crystalline NiO/CGO film were obtained by EAVD technique.