Growth and Characterization of ZnO Thin Film by Reactive Sputtering
碩士 === 國立中山大學 === 材料科學研究所 === 92 === Transparent conductive aluminum-doped zinc oxide(AZO) thin films were synthesized by reactive RF magnetron co-sputtering system with metallic zinc and aluminum targets under oxygen atmosphere. Systematic study on the fixed sputtering power of the Zinc target (PZn...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/83644038135741118290 |
| Summary: | 碩士 === 國立中山大學 === 材料科學研究所 === 92 === Transparent conductive aluminum-doped zinc oxide(AZO) thin films were synthesized by reactive RF magnetron co-sputtering system with metallic zinc and aluminum targets under oxygen atmosphere. Systematic study on the fixed sputtering power of the Zinc target (PZn) and the variation of the sputtering power of the Aluminum target (PAl) on structural, electrical and optical properties of AZO thin film was mainly investigated in this work. We found that the microstructure of AZO films would be obviously transformed from rice-like crystalline structure to nanocrystalline (nano-column) structure with the increasing of the sputtering power of the Aluminum target (PAl) . Nanocrystalline AZO films were formed at the specific sputtering power ratio of metallic targets (PAl/ PZn=1) . X-ray diffraction (XRD) spectra revealed that nanocrystalline AZO films highly preferred c-axis orientation (002) was growth in perpendicular to the substrate. The optical refractive index (n) of nanocrystalline AZO films had significantly lower values than others of microstructure AZO films, and this suggested the low optical dispersion in nano-column structure .
Furthermore, the electronic properties of AZO films with the proper sputtering power of the Aluminum target (PAl) evidently improved under rapid temperature annealing (RTA) process. It suggested that both high annealing temperature(400℃) and rapid cooling time(15min) are main factors to decrease the sheet resistances due to the maintenance of high temperature structural phase. The results of X-ray photoelectron spectroscopy (XPS) show that RTA process can decrease oxidized Al in order to decrease the sheet resistances.
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