| Summary: | 碩士 === 國立中山大學 === 材料科學研究所 === 92 === We use molecular beam deposition (MBD) system to grow CuAlSe2 thin film. The films have been characterized by electrical measurements but also by X-ray diffraction, electron probe microanalysis, optical measurements, scanning electron microscopy and photoluminescence. It is shown that CuAlSe2 thin film is chalcopyrite structure with a band gap of 2.65eV, p-type conductivity and the smallest resistivity is 1.26×102(��-cm). When we raise the Cu/Al flux ratio (in the range of Cu/Al=0.5~0.65), the amounts of Cu is higher, the resistivity is lower and the grain size of second phase CuSe is larger and closer. After KCN etching, the resistivity increases due to the elimination of second phase CuSe.
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