Study of carrier dynamics at the presence of cold Fermi seas by the Time-Resolved photoluminescence spectroscopy
碩士 === 國立東華大學 === 應用物理研究所 === 92 === Ultra-fast spectroscopy of semiconductors is currently one of the most exciting areas of research in physics property. Remarkable progress in the generation of tunable femto-second pulses laser has direct investigation of the most fundamental dynamical proces...
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| Format: | Others |
| Language: | zh-TW |
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2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/95727064300443953398 |
| Summary: | 碩士 === 國立東華大學 === 應用物理研究所 === 92 ===
Ultra-fast spectroscopy of semiconductors is currently one of the most exciting areas of research in physics property. Remarkable progress in the generation of tunable femto-second pulses laser has direct investigation of the most fundamental dynamical processes in semiconductors. This paper we comparison carrier dynamics distribution and thermalization time in the quantum well structure and bulk GaAs with different doping density. We can easier measure the signal by time-resolved spectrum technique. We discover modulation doping don’t obvious to influence the thermalization processes. On the contrary the total carrier density in sample are obvious to influence the thermalization processes. And our result is different to W. H. Knox’s result. Our result also conform to the result of calculations of theorem.
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