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碩士 === 國立中央大學 === 機械工程研究所 === 92 === In this study, elelctrochemical polishing of Cu-coated silicon wafer was explored. Anodic cyclic voltammograms was used to compare with various electrochemical polishing conditions. For example: kind of solution(add a oxidizing、contaminating agent or a diffusion...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/96995205482967258451 |
| Summary: | 碩士 === 國立中央大學 === 機械工程研究所 === 92 === In this study, elelctrochemical polishing of Cu-coated silicon wafer
was explored. Anodic cyclic voltammograms was used to compare with
various electrochemical polishing conditions. For example: kind of
solution(add a oxidizing、contaminating agent or a diffusion layer
promoter )、solution of concentration and temperature、polishing time.
Anodic potentiostatic method was applied to confirm the electropolishing
results.
The analysis of Anodic cyclic voltammograms could define
electropolishing range (Epp ~ Eport) and the difference of current density
(△ic-ip) used to compare with various condition for the effect of
electropolishing.
Phosphoric acid added glycerin could help electropolishing but
too much glycerin lead current density go down. AFM measure the
morphology of Cu-coated silicon wafer, before electropolishing the
average roughness and the maximum roughness are 7nm and 92nm, but
after electropolishing diminished to 1.2nm and 13nm.
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