| Summary: | 碩士 === 國立中央大學 === 機械工程研究所 === 92 === Formation of macro-pores and wall array on n-type silicon (100) by
photo-electrochemical etching has been investigated in this work. Using
dc-potentiodynamic polarization and potentiostatic etching to analyze the
anode polarization curves and etching morphologies of n-type silicon
(100) which were effect by pre-etching morphology, etching electrolyte
concentration, additive and etching electrolyte type. Choosing the best
etching parameters in the experiments and using galvanostatic etching to
fabrication the designate structures.
Results show that: decrease the pre-etching time to one half will obtain
a flat bottom pre-etching morphologies that increase the side etching of
pores and reach the 50µm pore diameters. n-type silicon (100) under
room temperature and 150W illumination, the depths of etching pores
decrease when HF concentration increase from 1M to 6M. 1M HF has the
deepest pores. Add ethanol in 2M HF will increase the etching depths.
But add 15.8M ethanol (which does not content any water) will decrease
the etching depths. On the contrary, add ethanol in 2M NH4F will
decrease the etching depths.
Galvanostatic etching with 24 hours can obtain the macro-pores and
wall array with 50µm widths, 100µm depths, and 10µm wall thickness.
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