Numerical Simulation of thermal and microdefect distributions during the Czochralski Si-Crystal Growth
碩士 === 國立中央大學 === 機械工程研究所 === 92 === To clear the characteristics of the Czochralski (Cz) furnace for the single-crystal growth of silicon, a set of global analyses of momentum, heat and mass transfer in small Cz furnaces is carried out using the finite-element method. Consider the global system to...
Main Authors: | Bing-Jung Chen, 陳炳忠 |
---|---|
Other Authors: | Jyh-Chen Chen |
Format: | Others |
Language: | zh-TW |
Published: |
2004
|
Online Access: | http://ndltd.ncl.edu.tw/handle/32204214799386084375 |
Similar Items
-
Numerical Simulation of thermal and microdefect distributions during the Czochralski Si-Crystal Growth
by: Bing-Jung Chen, et al.
Published: (2004) -
The Variation of Bulk Microdefect for Heavy Boron Doped Czochralski Silicon Crystal after Simulated Process Thermal Cycles
by: Kang Meng Yi, et al.
Published: (2002) -
Numerical Simulation of Czochralski Crystal Growth
by: Pan Hong Ying, et al.
Published: (1996) -
Modeling the linkages between heat transfer and microdefect formation in crystal growth : examples of Czochralski growth of silicon and vertical Bridgman growth of bismuth germanate
by: Mori, Tatsuo, 1961-
Published: (2005) -
Kinetics of Formation and Growth of Microdefects in Crystals
by: S. J. Olikhovsky, M. M. Belova, Ye. V. Kochelab
Published: (2006-09-01)