Numerical Simulation of thermal and microdefect distributions during the Czochralski Si-Crystal Growth

• Main Authors: Bing-Jung Chen, 陳炳忠
• Other Authors: Jyh-Chen Chen
• Format: Others
• Language: zh-TW
• Published: 2004
• Online Access: http://ndltd.ncl.edu.tw/handle/32204214799386084375

碩士 === 國立中央大學 === 機械工程研究所 === 92 === To clear the characteristics of the Czochralski (Cz) furnace for the single-crystal growth of silicon, a set of global analyses of momentum, heat and mass transfer in small Cz furnaces is carried out using the finite-element method. Consider the global system to be a steady state, axisymmetric system with laminar flow, and ideal gas condition. Convective and conductive heat transfers, radiative heat transfer between diffuse surfaces and the Navier–Stokes equations for gas are all combined and solved together. In this work, heat shield is installed in the Czochralski furnace. Heat shield refers from the reference papers and U.S. patent. Heat shield will effect the thermal and microdefect distributions. In this work will analysis the heat shield effects by numerical simulation.