An Efficient Analytical Model for Carrier Calculation Including Fermi-Dirac Integration and Its Application to Device Simulation

碩士 === 國立中央大學 === 電機工程研究所 === 92 === In this thesis, we develop an efficient analytical model for carrier calculation. This model is based on the Fermi-Dirac integral, and extends it from the Three-Region to Five-Region analytical model of carrier calculation. No numerical integral is needed in the...

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Main Authors: Zhi-Hou Lin, 林志豪
Other Authors: none
Format: Others
Language:en_US
Published: 2004
Online Access:http://ndltd.ncl.edu.tw/handle/75045770088829589748
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spelling ndltd-TW-092NCU054420232015-10-13T13:04:43Z http://ndltd.ncl.edu.tw/handle/75045770088829589748 An Efficient Analytical Model for Carrier Calculation Including Fermi-Dirac Integration and Its Application to Device Simulation 含費米積分之高效率載子解析模型及其在元件模擬上的應用 Zhi-Hou Lin 林志豪 碩士 國立中央大學 電機工程研究所 92 In this thesis, we develop an efficient analytical model for carrier calculation. This model is based on the Fermi-Dirac integral, and extends it from the Three-Region to Five-Region analytical model of carrier calculation. No numerical integral is needed in the new model. And the running time of Fermi-Dirac numerical integral is thirty-nine times slower than our analytical models. For verifying the correctness of the analytical model of carrier calculation, we use a carrier calculation model including the Fermi-Dirac carrier statistics in Medici and an analytical model of Shur. Moreover, we apply our model to the MOSFET that allows high doping in the source, drain and substrate regions. Furthermore, we use the developed model to discuss the semiconductor charge of MOS-C and the amplifier application of MOSFET. none 蔡曜聰 2004 學位論文 ; thesis 48 en_US
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language en_US
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description 碩士 === 國立中央大學 === 電機工程研究所 === 92 === In this thesis, we develop an efficient analytical model for carrier calculation. This model is based on the Fermi-Dirac integral, and extends it from the Three-Region to Five-Region analytical model of carrier calculation. No numerical integral is needed in the new model. And the running time of Fermi-Dirac numerical integral is thirty-nine times slower than our analytical models. For verifying the correctness of the analytical model of carrier calculation, we use a carrier calculation model including the Fermi-Dirac carrier statistics in Medici and an analytical model of Shur. Moreover, we apply our model to the MOSFET that allows high doping in the source, drain and substrate regions. Furthermore, we use the developed model to discuss the semiconductor charge of MOS-C and the amplifier application of MOSFET.
author2 none
author_facet none
Zhi-Hou Lin
林志豪
author Zhi-Hou Lin
林志豪
spellingShingle Zhi-Hou Lin
林志豪
An Efficient Analytical Model for Carrier Calculation Including Fermi-Dirac Integration and Its Application to Device Simulation
author_sort Zhi-Hou Lin
title An Efficient Analytical Model for Carrier Calculation Including Fermi-Dirac Integration and Its Application to Device Simulation
title_short An Efficient Analytical Model for Carrier Calculation Including Fermi-Dirac Integration and Its Application to Device Simulation
title_full An Efficient Analytical Model for Carrier Calculation Including Fermi-Dirac Integration and Its Application to Device Simulation
title_fullStr An Efficient Analytical Model for Carrier Calculation Including Fermi-Dirac Integration and Its Application to Device Simulation
title_full_unstemmed An Efficient Analytical Model for Carrier Calculation Including Fermi-Dirac Integration and Its Application to Device Simulation
title_sort efficient analytical model for carrier calculation including fermi-dirac integration and its application to device simulation
publishDate 2004
url http://ndltd.ncl.edu.tw/handle/75045770088829589748
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