| Summary: | 碩士 === 國立中央大學 === 電機工程研究所 === 92 === In this thesis, we develop an efficient analytical model for carrier calculation. This model is based on the Fermi-Dirac integral, and extends it from the Three-Region to Five-Region analytical model of carrier calculation. No numerical integral is needed in the new model. And the running time of Fermi-Dirac numerical integral is thirty-nine times slower than our analytical models. For verifying the correctness of the analytical model of carrier calculation, we use a carrier calculation model including the Fermi-Dirac carrier statistics in Medici and an analytical model of Shur. Moreover, we apply our model to the MOSFET that allows high doping in the source, drain and substrate regions. Furthermore, we use the developed model to discuss the semiconductor charge of MOS-C and the amplifier application of MOSFET.
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