Development of 2-D and 3-D numerical device simulator including an improved L-ILU solver and the circuit representation of PDM

• Main Authors: Jing-Fu Dai, 戴菁甫
• Other Authors: Yao-Tsung Tsai
• Format: Others
• Language: en_US
• Published: 2004
• Online Access: http://ndltd.ncl.edu.tw/handle/99468660400157598269

博士 === 國立中央大學 === 電機工程研究所 === 92 === Numerical simulation of semiconductor devices plays a very important role in the design and development of integrated circuits. We will present a new circuit simulator with an improved Levelized Incomplete LU method to perform such simulations. To have an environment for evaluating the interaction between a semiconductor device and a circuit, we use the equivalent circuit approach. This approach allows for simple representation on the carrier transport models of devices through equivalent circuit elements such as voltage controlled current sources and capacitors. Next, we will present more efficient equivalent circuit model for decoupled method (DM) and partial decoupled method (PDM) in semiconductor device simulation. The effectiveness of the new methods exhibit a good stability and convergence rate, and user interaction with the computational process is significantly reduced. Low memory requirements and high efficiency should pave the two methods to its widespread application in multidimensional mixed-level semiconductor device and circuit simulation. Further, we present the high efficiency variable permutation method, interleaving method, and the fractional truncation parameter is used to save further memory consumption, and the distributed pattern makes a speed-up in the numerical iteration. Also, in order to effectively arrange and record the scattered nonzero items of sparse matrix A, we create a connection-table to raise the efficiency of L-ILU factorization. It will contain the information automatically about the interconnection of the simulated network or equivalent circuit model.