Fabrication of Depletion & Enhancement mode Metamorphic HEMT
碩士 === 國立中央大學 === 電機工程研究所 === 92 === This paper introduces the metamorphic HEMT in different Indium content. We add the pseudomorphic channel like pHEMT in order to increase the current density and the power performance. Besides that, we try to fabricate the depletion & enhancement mode device u...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/21397120019800812721 |
| Summary: | 碩士 === 國立中央大學 === 電機工程研究所 === 92 === This paper introduces the metamorphic HEMT in different Indium content. We add the pseudomorphic channel like pHEMT in order to increase the current density and the power performance. Besides that, we try to fabricate the depletion & enhancement mode device using different gate metal in the In=50% & 60% mHEMT samples. We use the Pt diffusion to decrease the distance between the gate metal and channel and enhance the device threshold voltage to reach the enhancement mode device purpose.And we use the measurement system in our lab to measure the difference of DC, RF, Power characteristics. By the measurement data we calculate the diffusion depth of Pt gate and using the RF data to extract the small signal model elements and the electron transient time to analyse the performance difference between depletion and enhancement mode device.
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