| Summary: | 碩士 === 國立交通大學 === 光電工程系所 === 92 === In this thesis, we investigate the influence of Ru, Co, Os, Co+Al doping on Bi12SiO20 crystals . Because the semiconductor laser is cheaper than other lasers, We hope we can use this laser to do record. Now the Bi12TiO20 crystals can use wavelength 790nm to do record but it is very hard to increase the volume, this reason limits it’s application. However, Bi12SiO20 crystals don’t have this limit, we want to use them to do record at long wavelength. In order to let them be more sensitive at long wavelength we dope some elements in these crystals. Then we use a series of methods to find their impurity levels and measure the change of diffraction efficiency by time. By this way we can understand the effect of these dopants in Bi12SiO20 crystals.
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