THE DESIGN OF HIGH-OUTPUT-POWER RF POWER AMPLIFIER USING MOS DEVICES WITH POSITIVE SUBSTRATE BIAS
碩士 === 國立交通大學 === 電機資訊學院碩士在職專班 === 92 === This thesis is proposed for designing a high-output-power RF CMOS power amplifier using MOS devices with positive substrate bias. This design is targeted on the standard of FCC 15.247. The MOS devise with positive substrate bias was used to reduce the device...
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| Format: | Others |
| Language: | en_US |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/01425454375502701902 |