| Summary: | 碩士 === 國立交通大學 === 電信工程系所 === 92 === This thesis contents two works. First of all, we discuss the development of SiGe BiCMOS technology and the comparison between the SiGe and Si technologies. The first circuit, we implement a fully integrated 5.25GHz RF low noise amplifier, this circuit has a 8.3dB S11, a 4.6dB power gain, a 10.9dB S22 , a 3dBm IIP3 and a 9.3dB noise figure, under the 7.5mw power consumption with a 2.5 V supply voltage. Because the operating frequency shift to lower frequency, the gain and noise impedance matching point are changed, the measurement performance is not as good as simulation. Furthermore, we have completed a low-power concurrent low noise amplifier and down-converter. A Gilbert Cell is stacked on the top of differential LNA to achieve the re-use of DC current. We choose The RF signal is at 5GHz and IF signal is at 10megHz for measurement conveniently. The circuit is on-board testing and all the effect of parasitic and bonding wires is being taken account. The conversion gain is -1dB and IIP3 is -5dBm under the 5mw power consumption with a 2.5 V supply voltage. We would find out the difference reasons between simulation and measurement. These two IC have fabricated in a TSMC SiGe BiCMOS 0.35-μm technology. Moreover, the measurement and comparison with simulation had been done.
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