Quantum Correction Modeling and Simulation of Nanoscale Metal-Oxide-Semiconductor Devices
碩士 === 國立交通大學 === 電子物理系所 === 92 === Diverse device structures have been recently proposed explored, and found better characteristics than that of conventional used single-gate (SG) metal-oxide-semiconductor field-effect-transistors (MOSFETs). Among them, the double-gate (DG) MOSFETs and gate-all-ar...
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| Format: | Others |
| Language: | en_US |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/36754767776253785676 |