The investigation of structural defects and surface states on GaN films
博士 === 國立交通大學 === 電子物理系所 === 92 === Electrical and optical measurements, including Hall, current-voltage, photocapacitance, capacitance-voltage, deep level transient spectroscopy and x-ray absorption measurements, etc, has been employed to investigate the following effects, respectively. First, the...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2004
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/25173792392108851999 |