Effects of Plasma Substrate Treatment on on Cu-CVD

• Main Authors: Yu-Kao Yang, 楊宇國
• Other Authors: Mao-Chieh Chen
• Format: Others
• Language: en_US
• Published: 2004
• Online Access: http://ndltd.ncl.edu.tw/handle/4s6t64

碩士 === 國立交通大學 === 電子工程系所 === 92 === Abstract This thesis studies the copper chemical vapor deposition (Cu CVD) on TaN and TaSiN substrates as well as the effects of substrate plasma treatment (by Ar-, H2-, or N2-plasma) on the Cu nucleation and the Cu films property. The Cu CVD was performed using a liquid metalorganic compound of Cu(hfac)TMVS with 2.4% TMVS additive as the Cu precursor at a pressure of 150mtorr over a temperature range of 140 to 240℃. The activation energy, film resistivity, surface morphology, and texture of Cu films were investigated. Effects of Ar-, H2- and N2-plasma treatment on substrates were explored with respect to Cu nucleation. It was found that Cu CVD on Ar- and H2-plasma-treated TaN and TaSiN substrates all exhibited higher nucleation rate, and smaller wetting angle of the nucleated Cu grains, whereas the N2-plasma treatment resulted in lowered nucleation rate and increased wetting angle. Moreover, the Cu films deposited on Ar- and H2-plasma-treated TaN and TaSiN substrates all exhibited better contacted grains, smoother film surface, and higher intensity peak ratio of Cu(111)/Cu(200) reflections. Post-deposition thermal annealing at 400℃ resulted in reduced film resistivity, improved surface smoothness, and increased intensity peak ratio of Cu(111)/Cu(200) reflections.