Barrier Properties of TaSixNy Thin Films against Cu Diffusion

碩士 === 國立交通大學 === 電子工程系所 === 92 === This thesis studies the barrier property of 10-nm-thick TaSix-based TaSixNy layers sputter deposited from a TaSi2 target in various N2/Ar mixing gases, using electrical measurement on Cu/TaSixNy/p+-n junction diodes as well as various techniques of material analys...

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Bibliographic Details
Main Authors: Hsin-Hung Lin, 林信宏
Other Authors: Mao-Chieh Chen
Format: Others
Language:zh-TW
Published: 2004
Online Access:http://ndltd.ncl.edu.tw/handle/4u8nf3

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