The Investigation of the Variation of the Capacitance of High-k RF Metal-Insulator-Metal Capacitors
碩士 === 國立交通大學 === 電子工程系所 === 92 === As the feature sizes of complementary metal-oxide-semiconductor (CMOS) devices are scaled downward, the gate dielectric thickness must also decrease to maintain a value of capacitance to keep device drive current at an acceptable level. The Semiconductor Industry...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/wk2n2w |