| Summary: | 碩士 === 國立交通大學 === 電子工程系所 === 92 === Cobalt-titanium oxide and nickel-titanium oxide was formed by furnace oxidation. It can be used for the interpoly dielectric for nonvolatile memory, storage capacitor dielectric for DRAM and gate oxide for MOSFET applications. When it was used for the interpoly dielectric, low voltage operation flash memory cell with high coupling ratio can be achieved.
In this thesis, we demonstrate the quality of tunnel oxide without degradation during the high temperature process of metal oxidation. Physical, electrical and reliability characteristics of CoTiO and NiTiO were studied in this research. For the first time, we use the plasma pre-oxidation treatment and post-oxidation treatment in the fabrication process of these two dielectrics. From our results, after the NH3 or N2O plasma pre-oxidation treatment, basic electrical characteristics of CoTiO and NiTiO such as breakdown field, and time dependent dielectric breakdown (TDDB) were improved and we also show that post-oxidation treatment will degrade the reliability. After NH3 or N2O plasma pre-oxidation treatment, CoTiO and NiTiO reveal potential for application in nonvolatile memory.
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