Electrical Reliability of Integrating Low-k Silicon-Oxycarbide Barrier Film with Cu Metallization
碩士 === 國立交通大學 === 電子工程系所 === 92 === This thesis studies the thermal stability and physical property for three PECVD low-k (k-value less than 4) amorphous silicon-oxycarbide (α-SiCO:H) dielectric barrier films with different elemental compositions designated as SiCO-A (SiC1.19O0.73), SiCO-B (SiC1.12O...
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| Format: | Others |
| Language: | en_US |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/jzc8zm |