Fabrication and Characteristics of Au Free Fully Cu InP HBT Using Pt as Diffusion Barrier
碩士 === 國立交通大學 === 材料科學與工程系所 === 92 === The fully Cu metallization InP heterojunction bipolar transistor (HBT) using Platinum (Pt) as diffusion barrier has been successfully fabricated and demonstrated in this study. The InP HBT uses Ti/Pt/Cu for n-type, Pt/Ti/Pt/Cu for p-type ohmic contacts metals a...
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| Format: | Others |
| Language: | en_US |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/67275902326423999781 |
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