| Summary: | 碩士 === 國立交通大學 === 材料科學與工程系所 === 92 === The fully Cu metallization InP heterojunction bipolar transistor (HBT) using Platinum (Pt) as diffusion barrier has been successfully fabricated and demonstrated in this study. The InP HBT uses Ti/Pt/Cu for n-type, Pt/Ti/Pt/Cu for p-type ohmic contacts metals and Ti/Pt/Cu for interconnect metals with Pt as the diffusion barrier. Both the n+-InGaAs/Ti/Pt/Cu/Cr multilayer structure and GaAs/SiNx/Ti/Pt/Cu/Cr structure were stable up to 350oC 30 min annealing as judged from data of AES, XRD, and AFM and from the measurement of the sheet resistance. Current accelerated stress test was conducted on the device with current density (JC) of 80 kA/cm2 for 24 hours, the current gain showed no degradation after the high current stress. The devices were also thermally annealed at 200oC for 1 and 3 hours and showed no dramatic changes. Overall, we have successfully demonstrated that fully Cu metallization InP HBT can be achieved by using Pt as the diffusion barrier and Ti/Pt/Cu and Pt/Ti/Pt/Cu as the ohmic contacts.
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