Geometrical Effects of the Ring Duct on the Uniformity of Thin —film Deposition in a 8〞-PECVD Chamber

• Main Authors: Pai-Hsuan Huang, 黃百鉉
• Other Authors: chong-sin Wu
• Format: Others
• Language: en_US
• Published: 2003
• Online Access: http://ndltd.ncl.edu.tw/handle/00732827096102892254

碩士 === 國立交通大學 === 精密與自動化工程學程碩士班 === 92 === ABSTRACT In this study is presented the Geometrical Effects of the Ring Duct on the Uniformity of Thin —film Deposition in a 8〞-PECVD Chamber, we used the skewed slots of ring duct to produce swirl to bring gas flow, and improving uniformity of thin film deposition further. The results showed that we did not successful all of process, the significance showed us the domination of uniformity of thin film not only depends on geometry in the ring duct, but gas characteristics also will affect. The VLSI made progress toward more small process year by year, more integrated circuit degree gain biggest the quantity of output, the metal line forward more narrow, e.g... How to create a high efficiency of production, a high quantity of output, which results in increased device yields for manufacturers? That is way we have to go to do some of research.