Study of NBTI for different Nitrogen Implantation dosage on pMOSFETs
碩士 === 國立交通大學 === 電子物理系 === 92 === The subject of this thesis is to know the influence of different dosages, sequences, and positions of nitrogen implantation on NBTI(Negative Bias Temperature Instabilities) on the PMOSFET( P-type metal-oxide-silicon field-effect-transistor )。 As long a...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/71297342647494817249 |