Design and Implementation of Low Noise Amplifier and Voltage-Controlled Oscillator for WLAN applications

• Main Authors: Kun-Nan Liao, 廖崑男
• Other Authors: Yo-Sheng Lin
• Format: Others
• Language: en_US
• Published: 2004
• Online Access: http://ndltd.ncl.edu.tw/handle/74147314389255072332

碩士 === 國立暨南國際大學 === 電機工程學系 === 92 === Recently, the world of wireless communications and its applications started to grow rapidly. The communication systems expend so fast and the IC design keeps in step with the variable world of communication. There are two main parts in the thesis. In the first part, we use InGaP/GaAs HBT and SiGe BiCMOS technology to design and realize the concurrent dual-band Low Noise Amplifier and its components for low cost application. The two LNAs provide narrow-band gain and matching simultaneously at both 2.4 GHz (GPS) and 5.7 GHz (ISM) bands. In InGaP/GaAs HBT LNA, it consumes only 9 mW power and achieves transducer gains (S21) of 24.8 dB and 15.7 dB, input return losses (S11) of -23.6 dB and -17.7 dB, reverse isolation (S12) of -48.0 dB and -44.4 dB, and noise figures of 3.42 dB and 2.72 dB at these two bands, respectively. In SiGe BiCMOS LNA, it consumes only 14 mW power and achieves transducer gains (S21) of 24.6 dB and 14.8 dB, input return losses (S11) of -22.4 dB and -17.1 dB, reverse isolation (S12) of -47.6 dB and -45.9 dB, and noise figures of 3.41 dB and 4.81 dB at these two bands, respectively. In the second part, we use SiGe BiCOM technology to design a Voltage-Controlled Oscillator for 5 GHz-band applications. Meanwhile, there can be good Phase Noise under the low power, and FOM comes better than other technology. The simulated result attain a oscillation frequency sweep from 4.9-5.72 GHz, tuning range 820 MHz, Phase Noise of -101.3 dBc/Hz at 100kHz offset from fundamental of 5.5 GHz and 16.5 mW power consumption at 3.3V supply.