Study on Dual-Band RF Low Noise Amplifiers Design and Applications

• Main Authors: Wei-Pei Tsao, 曹維培
• Other Authors: 孫台平
• Format: Others
• Language: zh-TW
• Published: 2004
• Online Access: http://ndltd.ncl.edu.tw/handle/71309889135736959701

碩士 === 國立暨南國際大學 === 電機工程學系 === 92 === In the communication system, noise has very great influence on the signal quality of transmission. To ensure the signal quality after receiving from the air, the noise characteristics must be limited such that the signal can be detected effectively. The low-noise amplifier（LNA） is located at the front-end of the receiver. It is very important to the communication system because it determines the noise performance of the whole system. Sufficient gain, low noise added by itself, and proper impedance matching make it to be possible. Therefore, it is very important to the microwave transceiver system that how to design a good LNA. Recently, on one hand the hot requirement of the wireless communication services pushes many applications to arise, for example, GPS, DECT, etc., and on the other operating frequency moves toward higher and higher to meet the dependence on the high data rate, Bluetooth, WLAN, etc. for example. Using the CMOS technologies to implement the RF transceivers becomes an irresistible general trend because the smaller size, lower cost, higher performance-cost ratio, and SoC applications are just the major stream of the current market. In this thesis, it includes three parts; they are system, specifications, and simulations. In the first part, we discuss and compare some receiver architectures for their advantages and drawbacks. In the second part, the key point is how to translate the system standard to the circuit-level specifications. In the last part, we concentrate our attention on the design method of the LNAs’, a simple and intuitional method that can be used to design low-noise, low-power-consumption LNA.