| Summary: | 碩士 === 國立成功大學 === 光電科學與工程研究所 === 92 === In this thesis, we use the newest commercial in-line PECVD to deposit SiNx:H antireflective coating layer in low temperature (< 300oC). And finish the contacts of solar cells by high throughput screen printing.
The main discussion is the quality of SiNx which is grown in different gas ratio (NH3/SiH4) and substrate temperature. We use AFM to obtain the roughness of the SiNx surface, FTIR spectrum to analysis the bonding of elements, SIMS to achieve the depth distribution of the film. Then, we measure optical characteristic of the SiNx film, for example, the refractive index and the reflectance. Finally, we make the application for commercial crystalline silicon solar cell.
From the results, gas ratio (NH3/SiH4) influences the optical characteristics of SiNx seriously. The compositions of SiNx films are not the same in the different substrate temperature. It also affects the passivation for silicon wafer.
We deposit SiNx antireflective coating layer in different gas ratio (NH3/SiH4) and substrate temperature for solar cells. After compiling efficiency data, we find the optimum substrate temperature to reduce the thermal budget.
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