| Summary: | 碩士 === 國立成功大學 === 光電科學與工程研究所 === 92 === The amount of leakage current has been judged whether the dielectric material was suit for isolated layer of metal-isolator-semiconductor (MIS) or not for a long time. In the thesis, we used diamond-like carbon film (DLC) as the gate dielectric of MIS device. DLC layers were deposited with various bias voltages by the dc magnetron sputtering. We chose low deposition rates and higher vacuum circumstances to get DLC films with higher isolated quality. First, we calculated the ratio of the integrated areas of the Raman D and G peaks (ID/IG), and then measured the leakage current of MIS by IV sourcemeter and analyzed the reliability of each sample. The results could be derived from the change of DLC chemical bonds and the trapping center theory. We found that the performance of the leakage current and reliability of each sample was consistent to the isolated ability of the DLC film, which was judged from the Raman spectrum. The MIS device with its DLC film deposited at 1100 V bias owned the best quality about the leakage current and reliability test: the leakage current at 2 V was about 6*10-8 A/cm2, the breakdown electric field was more than 120 MV/cm, the SILC(stress-induced leakage current) of the device was slight, and there existed many times of soft breakdown phenomenon in TDDB(time-dependent dielectric breakdown) test.
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