Electron transport and tunneling rate in semiconductor Quantum Dots

• Main Authors: Yu-Min Shieh, 謝育民
• Other Authors: Tei-Chen Chen
• Format: Others
• Language: zh-TW
• Published: 2004
• Online Access: http://ndltd.ncl.edu.tw/handle/29869694721662011187

碩士 === 國立成功大學 === 機械工程學系碩博士班 === 92 === 　　In the recent years, the technology of semiconductor manufacture makes progress rapidly and the size of photoelectric elements is continuously reduced to get advance in the manufacture of the quantum dots. In addition, the utilization in the double quantum dots has become to realize one of the developments in the systems of quantum computation. The theoretical possibility to perform certain tasks in a much more efficient way using a `quantum computer' instead of a `classical computer', has stimulated the search for physical realizations of the basic building block of such a computer:the quantum bit. In principle, any quantum two-level system can be used as a qubit. In particular, recent studies have put forward double quantum dots as interesting candidates for realizing qubits. The possible application of double quantum dot devices in quantum logic forms an important motivation forthis work. 　　However electron that transports through the double quantum dots made of qubits is affected by the electronic correlation of the Coulomb’s effect.Consequently,the phenomenon of electron transport becomes very complex. Therefore, we must study those properties and use them to develop the qubits. In this article we will introduce the applications and developments of the quantum dots and we will simulate the tunneling rate for the facts of the size in quantum wells and quantum dots in the latter sections.In addition, we discuss the resonant tunneling in the extreme small size.